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INFRARED SEMICONDUCTOR GAS DETECTOR RESEARCH

DOI: 10.46573/2658-5030-2023-3-84-89

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Authors

L.V. ILYASOV, Dr. Sc.

Abstract

The results of experimental studies of an infrared semiconductor gas detector, created on the basis of a commercially available semiconductor converter of the PP-1 type, whose principle of operation is based on measuring the electrical conductivity of a semiconductor sensing element heated to a temperature of 400…450 °C when it comes into contact with flammable gases, are presented. It has been established that the change in the electrical conductivity of this element is accompanied by infrared radiation, which makes it possible to use the measurement of the intensity of this radiation by an infrared photodiode to obtain measuring information about the concentration of the analyzed gas. The designs of the detector and the laboratory installation for its research are described. The dependences of the detector signal on its main operating parameters are given, namely: on the concentration of the analyzed gases (hydrogen, propane) in the carrier gas (air) flow, on the supply voltage of the semiconductor sensing element, on the distance between the sensitive.

Keywords

: infrared, semiconductor, detector, gas, experiment, concentration, radiation, metrology.